| PART |
Description |
Maker |
| MGY20N120D_D ON1930 MGY20N120D ON1929 |
IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ONSEMI[ON Semiconductor]
|
| SGL160N60UFDTU |
Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXGH10N60AU1 IXGH10N60U1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
|
IXYS Corporation
|
| IXDN55N120D1 IXDN55N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IXGH17N100AU1 IXGH17N100U1 |
Low VCE(sat) IGBT with Diode High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...
|
INFINEON[Infineon Technologies AG]
|
| IXDP35N60B IXDH35N60B IXDH35N60BD1 |
IGBT Discretes: NPT IGBT
IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| MAP40-3000 MAP40-3101 MAP42-1005 MAP40-3003 MAP40- |
Universal Input 85-264 VAC
Universal Input 85-264 VAC 通用输入85-264
|
POWER-ONE[Power-One]
TE Connectivity, Ltd.
|
